Avalanche Energy Rating (Eas) 5000 mJ
Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.078Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 55A
Turn-Off Delay Time 79 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 78m Ω @ 41A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 625W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarHT?
Operating Temperature -55°C~150°C TJ