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IXFL44N60

IXYS
RoHS
RoHS RoHS compliant
Package ISOPLUS264?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description IXYS IXFL44N60 N-channel MOSFET Transistor, 41 A, 600 V, 3-Pin ISOPLUS264
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264?
Number of Pins 264
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection ISOLATED
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 41A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 41A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.13Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 176A
Avalanche Energy Rating (Eas) 3000 mJ

Dimensions

Height 26.42mm
Length 20.29mm
Width 5.21mm

Compliance

RoHS Status ROHS3 Compliant

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