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IXFL44N100P

IXYS
RoHS
RoHS RoHS compliant
Package ISOPLUS264?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 22A I5-PAK
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264?
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET?, PolarP2?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 357W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 305nC @ 10V
Rise Time 68ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 54 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 22A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 2000 mJ

Compliance

RoHS Status ROHS3 Compliant

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