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IXFL39N90

IXYS
RoHS
RoHS RoHS compliant
Package ISOPLUS264?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description IXYS IXFL39N90 N-channel MOSFET Transistor, 34 A, 900 V, 3-Pin ISOPLUS264
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Width 5.21mm
Length 20.29mm
Height 26.42mm

Technical

Avalanche Energy Rating (Eas) 4000 mJ
Pulsed Drain Current-Max (IDM) 154A
Drain to Source Breakdown Voltage 900V
Drain-source On Resistance-Max 0.22Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 34A
Turn-Off Delay Time 125 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 68ns
Gate Charge (Qg) (Max) @ Vgs 375nC @ 10V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Input Capacitance (Ciss) (Max) @ Vds 13400pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 220m Ω @ 19.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 45 ns
Case Connection ISOLATED
Power Dissipation 580W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 580W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 264
Package / Case ISOPLUS264?
Mounting Type Through Hole
Mount Through Hole

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