Avalanche Energy Rating (Eas) 2000 mJ
Pulsed Drain Current-Max (IDM) 120A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 29A
Turn-Off Delay Time 71 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 350nC @ 10V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Input Capacitance (Ciss) (Max) @ Vds 24000pF @ 25V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Rds On (Max) @ Id, Vgs 230m Ω @ 19A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 520W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarP2?
Operating Temperature -55°C~150°C TJ