IXFL32N120P
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUSi5-Pak?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1200V 24A I5-PAK
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Buying Options
Total Price: USD $112
Unit Price: USD $112.002186
≥1 USD $112.002186
≥200 USD $44.689803
≥500 USD $43.197036
≥1000 USD $42.459186
Inventory: 1093
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUSi5-Pak?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HiPerFET?, PolarP2?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
Turn On Delay Time 70 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 340m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 21000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 62ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 2000 mJ
Dimensions
Height 26.42mm
Length 20.29mm
Width 5.21mm
Compliance
RoHS Status ROHS3 Compliant
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