Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 108A
Turn-Off Delay Time 94 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 300V
Gate Charge (Qg) (Max) @ Vgs 268nC @ 10V
Current - Continuous Drain (Id) @ 25°C 108A Tc
Input Capacitance (Ciss) (Max) @ Vds 16200pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 16m Ω @ 105A, 10V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 520W Tc
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, Polar3?
Operating Temperature -55°C~150°C TJ