IXFK48N50Q
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 48A TO-264
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Buying Options
Total Price: USD $8.3
Unit Price: USD $8.2954
≥1 USD $8.2954
≥10 USD $6.80675
≥100 USD $6.59395
≥500 USD $6.38115
≥1000 USD $6.16835
≥3000 USD $5.52995
Inventory: 10505
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 100MOhm
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 22 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 48A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 192A
Avalanche Energy Rating (Eas) 2500 mJ
Dimensions
Height 26.16mm
Length 19.96mm
Width 5.13mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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