Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 44A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Input Capacitance (Ciss) (Max) @ Vds 8900pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Rds On (Max) @ Id, Vgs 130m Ω @ 22A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 560W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ