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IXFK36N60P

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 36A TO-264
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Buying Options
Total Price: USD $3.12
Unit Price: USD $3.122827
≥1 USD $3.122827
≥10 USD $2.946059
≥100 USD $2.779299
≥500 USD $2.621983
≥1000 USD $2.473572
Inventory: 1094
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.19Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 36A
Turn-Off Delay Time 80 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25 ns
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Input Capacitance (Ciss) (Max) @ Vds 5800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 190m Ω @ 18A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 650W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 650W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 36A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 30 Weeks

Alternative Model

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