Operating Temperature -55°C~150°C TJ
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 325nC @ 25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.18Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 144A