Avalanche Energy Rating (Eas) 3000 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 900A
Drain-source On Resistance-Max 0.0029Ohm
Continuous Drain Current (ID) 360A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 525nC @ 10V
Current - Continuous Drain (Id) @ 25°C 360A Tc
Input Capacitance (Ciss) (Max) @ Vds 33000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 3mA
Rds On (Max) @ Id, Vgs 2.9m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1250W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series GigaMOS? HiPerFET?
Operating Temperature -55°C~175°C TJ