IXFK33N50
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 33A TO-264AA
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 2500 mJ
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 33A
Turn-Off Delay Time 110 ns
Fall Time (Typ) 23 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 42ns
Gate Charge (Qg) (Max) @ Vgs 227nC @ 10V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 25V
Vgs(th) (Max) @ Id 4V @ 4mA
Rds On (Max) @ Id, Vgs 160m Ω @ 16.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 416W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 416W Tc
Number of Elements 1
Pin Count 3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Resistance 150mOhm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HiPerFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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