IXFK32N80P
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 32A TO-264
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Buying Options
Total Price: USD $13.58
Unit Price: USD $13.57645
≥1 USD $13.57645
≥10 USD $11.1397
≥100 USD $10.792
≥500 USD $10.44335
≥1000 USD $10.09565
≥3000 USD $9.0516
Inventory: 7403
Minimum: 1
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Technical Details
Technical
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 2000 mJ
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 0.27Ohm
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 5V
Continuous Drain Current (ID) 32A
Turn-Off Delay Time 85 ns
Fall Time (Typ) 24 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 24 ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 270m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 830W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 830W Tc
Number of Elements 1
Qualification Status Not Qualified
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Alternative Model
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