Operating Temperature -55°C~175°C TJ
Series HiPerFET?, PolarP2?
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1250W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 15400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 220A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 600A
DS Breakdown Voltage-Min 150V
Avalanche Energy Rating (Eas) 3000 mJ