IXFK180N07
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 70V 180A TO-264AA
PDF
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Buying Options
Total Price: USD $2.99
Unit Price: USD $2.99207
≥1 USD $2.99207
≥10 USD $2.82271
≥100 USD $2.66293
≥500 USD $2.5122
≥1000 USD $2.37
≥3000 USD $2.23585
Inventory: 6026
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 568W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 420nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 70V
Pulsed Drain Current-Max (IDM) 720A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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