IXFK16N90Q
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 16A TO-264AA
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 5.13mm
Length 19.96mm
Height 26.16mm
Technical
Avalanche Energy Rating (Eas) 1500 mJ
Pulsed Drain Current-Max (IDM) 64A
Drain to Source Breakdown Voltage 900V
Drain-source On Resistance-Max 0.65Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 56 ns
Fall Time (Typ) 14 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 24ns
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 650m Ω @ 8A, 10V
FET Type N-Channel
Turn On Delay Time 21 ns
Case Connection DRAIN
Power Dissipation 360W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series HiPerFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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