IXFH88N20Q
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 88A TO-247
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Buying Options
Total Price: USD $5.77
Unit Price: USD $5.7722
≥1 USD $5.7722
≥10 USD $4.73575
≥100 USD $4.5885
≥500 USD $4.4403
≥1000 USD $4.2921
Inventory: 9160
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 88A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 2500 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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