IXFH7N100P
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH
PDF
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Buying Options
Total Price: USD $1.94
Unit Price: USD $1.9361
≥1 USD $1.9361
≥10 USD $1.5884
≥100 USD $1.539
≥500 USD $1.4896
≥1000 USD $1.43925
Inventory: 1083
Minimum: 1
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Technical Details
Technical
Drain Current-Max (Abs) (ID) 7A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Vgs(th) (Max) @ Id 6V @ 1mA
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3.5A, 10V
FET Type N-Channel
Power Dissipation-Max 300W Tc
Configuration Single
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Part Status Active
Series HiPerFET?, Polar?
Published 2012
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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