Avalanche Energy Rating (Eas) 2000 mJ
Drain to Source Breakdown Voltage 70V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 76A
Turn-Off Delay Time 130 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V
Vgs(th) (Max) @ Id 3.4V @ 4mA
Rds On (Max) @ Id, Vgs 11m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Not For New Designs
Operating Temperature -55°C~175°C TJ