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IXFH74N20P

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 74A TO-247
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Buying Options
Total Price: USD $6.62
Unit Price: USD $6.6176
≥1 USD $6.6176
≥10 USD $5.28029
≥100 USD $4.7245
≥500 USD $4.168648
≥1000 USD $3.751783
≥3000 USD $3.515565
Inventory: 559
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Box
Published 2006
Series PolarHT? HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 34MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 480W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 480W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 74A Tc
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Rise Time 21 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 74A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 1000 mJ

Dimensions

Height 21.46mm
Length 16.26mm
Width 5.3mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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