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IXFH6N100Q

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 1000V 6A TO-247AD
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 2Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 700 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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