IXFH6N100F
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS RF IXFH6N100F RF FET Transistor, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD
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Buying Options
Total Price: USD $40.27
Unit Price: USD $40.2724
≥1 USD $40.2724
≥10 USD $33.04385
≥100 USD $32.0112
≥500 USD $30.97855
≥1000 USD $29.9459
≥3000 USD $26.84795
Inventory: 909
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerRF?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.9Ohm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 180W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 180W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9 Ω @ 3A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V
Rise Time 8.6 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8.3 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 24A
Avalanche Energy Rating (Eas) 700 mJ
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Alternative Model
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