IXFH52N30Q
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 300V 52A TO-247AD
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Buying Options
Total Price: USD $0.88
Unit Price: USD $0.88373
≥1 USD $0.88373
≥10 USD $0.83371
≥100 USD $0.78652
≥500 USD $0.742
≥1000 USD $0.7
≥3000 USD $0.66038
Inventory: 7755
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Technical
Nominal Vgs 4 V
Dual Supply Voltage 300V
Pulsed Drain Current-Max (IDM) 208A
Drain to Source Breakdown Voltage 300V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 52A
Reverse Recovery Time 250 ns
Turn-Off Delay Time 80 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 60 ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Vgs(th) (Max) @ Id 4V @ 4mA
Rds On (Max) @ Id, Vgs 60m Ω @ 500mA, 10V
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 360W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Number of Elements 1
Pin Count 3
Current Rating 52A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 300V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
Resistance 60mOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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