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IXFH24N90P

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
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Buying Options
Total Price: USD $5.3
Unit Price: USD $5.3024
≥1 USD $5.3024
≥10 USD $5.00227
≥100 USD $4.71912
≥500 USD $4.452
≥1000 USD $4.2
≥3000 USD $3.96226
Inventory: 6778
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 660W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 660W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 420m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 3.5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.42Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 1000 mJ
Nominal Vgs 3.5 V

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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