IXFH23N60Q
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 23A TO-247
PDF
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Buying Options
Total Price: USD $26.25
Unit Price: USD $26.2485
≥1 USD $26.2485
≥10 USD $21.53745
≥100 USD $20.86485
≥500 USD $20.1913
≥1000 USD $19.5187
Inventory: 1156
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Nominal Vgs 4.5 V
Avalanche Energy Rating (Eas) 1500 mJ
Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 92A
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-247AD
Threshold Voltage 4.5V
Continuous Drain Current (ID) 23A
Reverse Recovery Time 250 ns
Turn-Off Delay Time 45 ns
Fall Time (Typ) 20 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Current - Continuous Drain (Id) @ 25°C 23A Tc
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Rds On (Max) @ Id, Vgs 320m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 400W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 400W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Resistance 320mOhm
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HiPerFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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