IXFH20N80P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 20A TO-247
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Buying Options
Total Price: USD $1.24
Unit Price: USD $1.23723
≥1 USD $1.23723
≥10 USD $1.1672
≥100 USD $1.10113
≥500 USD $1.0388
≥1000 USD $0.98
≥3000 USD $0.92453
Inventory: 2532
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 500W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4685pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.52Ohm
Drain to Source Breakdown Voltage 800V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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