Drain to Source Resistance 600mOhm
Drain to Source Breakdown Voltage 900V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V
Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Input Capacitance (Ciss) (Max) @ Vds 5230pF @ 25V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 10V
Element Configuration Single
Power Dissipation-Max 540W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarP2?
Operating Temperature -55°C~150°C TJ