IXFH16N50P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 16A TO-247
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Buying Options
Total Price: USD $7.52
Unit Price: USD $7.51735
≥1 USD $7.51735
≥10 USD $6.16835
≥100 USD $5.9755
≥500 USD $5.78265
≥1000 USD $5.59075
Inventory: 1107
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55?°C~150?°C TJ
Packaging Tube
Published 2006
Series HiPerFETa??, PolarHTa??
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 16A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m ?? @ 8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ?±30V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 750 mJ
Dimensions
Height 21.46mm
Length 16.26mm
Width 5.3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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