Avalanche Energy Rating (Eas) 900 mJ
Pulsed Drain Current-Max (IDM) 42A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.55Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 14A
Reverse Recovery Time 200 ns
Turn-Off Delay Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Rds On (Max) @ Id, Vgs 550m Ω @ 7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarHT?
Operating Temperature -55°C~150°C TJ