IXFH13N80Q
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 13A TO-247
PDF
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Buying Options
Total Price: USD $8.06
Unit Price: USD $8.056274
≥1 USD $8.056274
≥10 USD $7.600258
≥100 USD $7.170056
≥500 USD $6.764199
≥1000 USD $6.381316
Inventory: 1152
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 700m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 36ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 750 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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