IXFH13N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 12.5A TO-247
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Buying Options
Total Price: USD $2.92
Unit Price: USD $2.920309
≥1 USD $2.920309
≥10 USD $2.755005
≥100 USD $2.599066
≥500 USD $2.451949
≥1000 USD $2.313161
Inventory: 1212
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.5A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 12.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.9Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 50A
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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