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IXFH120N15P

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 120A TO-247
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Buying Options
Total Price: USD $8.47
Unit Price: USD $8.4744
≥1 USD $8.4744
≥10 USD $6.76368
≥100 USD $6.05169
≥500 USD $5.339734
≥1000 USD $4.805759
Inventory: 633
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2006
Series PolarHT? HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE ENERGY RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 600W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 600W
Case Connection DRAIN
Turn On Delay Time 33 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 42 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 5V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.016Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 260A
Avalanche Energy Rating (Eas) 2000 mJ

Dimensions

Height 21.46mm
Length 16.26mm
Width 5.3mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

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