IXFE180N20
RoHS
/
Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 158A ISOPLUS227
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Pulsed Drain Current-Max (IDM) 720A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.012Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 158A
Turn-Off Delay Time 180 ns
Fall Time (Typ) 36 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 85ns
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Current - Continuous Drain (Id) @ 25°C 158A Tc
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 8mA
Rds On (Max) @ Id, Vgs 12m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 500W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 500W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HiPerFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case SOT-227-4, miniBLOC
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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