IXFC40N30Q
RoHS
/
Package ISOPLUS220?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 300V ISOPLUS220
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
DS Breakdown Voltage-Min 300V
Pulsed Drain Current-Max (IDM) 160A
Drain-source On Resistance-Max 0.08Ohm
Drain Current-Max (Abs) (ID) 36A
Drain to Source Voltage (Vdss) 300V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2013
Packaging Tube
Physical
Transistor Element Material SILICON
Package / Case ISOPLUS220?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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