IXFC16N50P
RoHS
/
Package ISOPLUS220?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 10A ISOPLUS220
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 750 mJ
Drain to Source Breakdown Voltage 500V
Drain-source On Resistance-Max 0.45Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 70 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Rds On (Max) @ Id, Vgs 450m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 125W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 16A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case ISOPLUS220?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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