IXFC110N10P
RoHS
/
Package ISOPLUS220?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS SEMICONDUCTOR IXFC110N10P MOSFET Transistor, N Channel, 60 A, 100 V, 17 mohm, 10 V, 5 V
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Isolation Voltage 2.5kV
Avalanche Energy Rating (Eas) 1000 mJ
Pulsed Drain Current-Max (IDM) 250A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.017Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 5V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25ns
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 3550pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 17m Ω @ 55A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 120W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 120W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 220
Package / Case ISOPLUS220?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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