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IXFB52N90P

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Technical

Nominal Vgs 3.5 V
Avalanche Energy Rating (Eas) 2000 mJ
Pulsed Drain Current-Max (IDM) 104A
Drain to Source Breakdown Voltage 900V
Drain-source On Resistance-Max 0.16Ohm
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 3.5V
Continuous Drain Current (ID) 52A
Turn-Off Delay Time 95 ns
Fall Time (Typ) 42 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 80 ns
Gate Charge (Qg) (Max) @ Vgs 308nC @ 10V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Input Capacitance (Ciss) (Max) @ Vds 19000pF @ 25V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Rds On (Max) @ Id, Vgs 160m Ω @ 26A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 1.25kW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1250W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarP2?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 26 Weeks

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