IXFB44N100Q3
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A
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Buying Options
Total Price: USD $82.98
Unit Price: USD $82.983157
≥1 USD $82.983157
≥200 USD $33.111338
≥500 USD $32.004563
≥1000 USD $31.458397
Inventory: 1196
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 220MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56kW
Case Connection DRAIN
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 264nC @ 10V
Rise Time 300ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 4000 mJ
Dimensions
Height 26.59mm
Length 20.29mm
Width 5.31mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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