IXFB30N120P
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 1.2KV 30A 3-Pin(3+Tab) PLUS 264
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Buying Options
Total Price: USD $74.1
Unit Price: USD $74.1
≥1 USD $74.1
≥10 USD $60.8
≥100 USD $58.9
≥500 USD $57
≥1000 USD $55.1
≥3000 USD $49.4
Inventory: 1104
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1250W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 350m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 22500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V
Rise Time 60 ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 56 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 75A
Avalanche Energy Rating (Eas) 2000 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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