IXFB210N20P
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 210 Amps 200V 0.0105 Rds
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Buying Options
Total Price: USD $30.21
Unit Price: USD $30.2104
≥1 USD $30.2104
≥10 USD $25.04832
≥100 USD $23.482712
Inventory: 84
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 4000 mJ
Pulsed Drain Current-Max (IDM) 600A
Drain to Source Breakdown Voltage 200V
Drain-source On Resistance-Max 0.0105Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 210A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Input Capacitance (Ciss) (Max) @ Vds 18600pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Rds On (Max) @ Id, Vgs 10.5m Ω @ 105A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 1.5kW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1500W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarP2?
Published 2010
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 264
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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