Operating Temperature -55?°C~150?°C TJ
Series HiPerFETa??, PolarP2a??
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.9 ?? @ 3.5A, 10V
Vgs(th) (Max) @ Id 6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2590pF @ 25V
Current - Continuous Drain (Id) @ 25?°C 7A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 7A
Drain Current-Max (Abs) (ID) 7A
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 1000V