IXFA14N60P3
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 14A TO-263AA
PDF
/
Inventory: 7190
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?, Polar3?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 327W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 540m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 14A
Drain-source On Resistance-Max 0.54Ohm
Pulsed Drain Current-Max (IDM) 35A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 700 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
IXFA14N60P3+price,IXFA14N60P3+datasheet,IXFA14N60P3+in stock,buy+IXFA14N60P3,finder+IXFA14N60P3,IXFA14N60P3+tutorials,IXFA14N60P3+download