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IXFA130N10T2

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 130A TO-263AA
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Buying Options
Total Price: USD $4.73
Unit Price: USD $4.7344
≥1 USD $4.7344
≥10 USD $3.751792
≥100 USD $3.215872
≥500 USD $2.858522
≥1000 USD $2.447614
≥3000 USD $2.304685
Inventory: 140
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 800 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 300A
Drain-source On Resistance-Max 0.0091Ohm
Continuous Drain Current (ID) 130A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Rds On (Max) @ Id, Vgs 9.1m Ω @ 65A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 360W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series GigaMOS?, HiPerFET?, TrenchT2?
Published 2009
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 30 Weeks

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