IRFP460
RoHS
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Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MegaMOS? Tube Through Hole N-Channel Mosfet Transistor 20A Tc 20A 260W 65ns
PDF
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Buying Options
Total Price: USD $1.05
Unit Price: USD $1.045212
≥1 USD $1.045212
≥10 USD $0.888234
≥100 USD $0.803204
≥500 USD $0.705093
≥1000 USD $1.558
Inventory: 251
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series MegaMOS?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 20A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 260W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 260W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 210nC @ 10V
Rise Time 81ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 80A
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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