Drain to Source Resistance 10Ohm
FET Feature Depletion Mode
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 220mA
Drive Voltage (Max Rds On,Min Rds On) 0V
Drain to Source Voltage (Vdss) 250V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Rds On (Max) @ Id, Vgs 10Ohm @ 220mA, 0V
Power Dissipation-Max 1.4W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 125°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~125°C TJ