Drain to Source Resistance 1Ohm
FET Feature Depletion Mode
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 2.2A
Turn-Off Delay Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 0V
Drain to Source Voltage (Vdss) 60V
Rds On (Max) @ Id, Vgs 1Ohm @ 300mA, 0V
Power Dissipation-Max 1.1W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 125°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~125°C TJ