Avalanche Energy Rating (Eas) 1800 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 115A
Drain-source On Resistance-Max 0.083Ohm
Drain Current-Max (Abs) (ID) 46A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 322nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Input Capacitance (Ciss) (Max) @ Vds 7700pF @ 25V
Vgs(th) (Max) @ Id 5V @ 2.9mA
Rds On (Max) @ Id, Vgs 83m Ω @ 29A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 417W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ