SPP80N06S2L-07
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 80A TO-220
PDF
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.3585
≥1 USD $1.3585
≥10 USD $1.11435
≥100 USD $1.08015
≥500 USD $1.045
≥1000 USD $1.00985
Inventory: 7006
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
REACH SVHC Unknown
Radiation Hardening No
Technical
Nominal Vgs 1.6 V
Avalanche Energy Rating (Eas) 450 mJ
Dual Supply Voltage 55V
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 28 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 35ns
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4210pF @ 25V
Vgs(th) (Max) @ Id 2V @ 150μA
Rds On (Max) @ Id, Vgs 7m Ω @ 60A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 18 ns
Power Dissipation 210W
Operating Mode ENHANCEMENT MODE
Current 80A
Power Dissipation-Max 210W Tc
Voltage 55V
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Pin Count 3
Current Rating 80A
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 55V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
ECCN Code EAR99
Termination Through Hole
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series OptiMOS?
Published 2003
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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