SPP08P06PBKSA1
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-220AB
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Technical Details
Technical
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 300mOhm @ 6.2A, 10V
FET Type P-Channel
Power Dissipation-Max 42W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SIPMOS?
Published 1999
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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